Surging memory demand driven by expanded investment in artificial intelligence (AI) data centers, combined with a persistent supply shortage, is fueling the strong results. Analysts and industry sources expect both companies to sustain record-level growth in the second half of the year as they increase the revenue share from sixth-generation high-bandwidth memory (HBM4).

According to Wise Report on Sept. 28, Samsung Electronics’ estimated operating profit for the third quarter stands at 111.38 trillion won, representing a sharp year-on-year increase of 815.47%. It would be the first time a South Korean company has posted quarterly operating profit of more than 100 trillion won. Revenue is also expected to grow 137.93% to 204.76 trillion won, surpassing the all-time record set in the second quarter. SK hynix is likewise forecast to post revenue of 99.54 trillion won and operating profit of 78.13 trillion won, representing steep year-on-year growth of 307.13% and 586.34%, respectively.

The strong results are underpinned by a structural supply shortage in memory semiconductors and the resulting price increases. Market research firm TrendForce projected that general-purpose DRAM prices would rise by up to 18% quarter-on-quarter in the third quarter of this year, while NAND flash prices would climb by as much as 15%. Intel CEO Lip-Bu Tan recently warned at an AI Infrastructure Summit that “as AI adoption continues to drive memory demand higher, supply shortages and price spikes will intensify further next year.”

Experts are also broadly optimistic about the long-term strength of the semiconductor sector. Baek Gil-hyeon, a research analyst at Yuanta Securities Korea, projected that even if the pace of memory price increases moderates somewhat, tight supply-demand conditions will persist through 2027 to 2028. He noted that supply constraints are creating a market environment favorable to manufacturers.

As Samsung Electronics and SK hynix concentrate their production capacity on HBM for AI semiconductors, the shortage of general-purpose DRAM is becoming increasingly acute. According to KB Securities, the share of HBM in Samsung Electronics’ total DRAM production capacity is expected to expand from 27% last year to 40% by 2027. Meanwhile, the share of general-purpose DRAM is projected to fall from 73% to 59% over the same period, further deepening the structural supply shortage.

Full article

SK Hynix stated on October 1 that “no specific decisions have been made” regarding reports about the potential listing of its U.S. NAND flash subsidiary Solida, adding, “The company will prioritize long-term corporate value and shareholder value enhancement as the most critical criteria for judgment.” While additional investment is necessary to support Solida’s growth, the company emphasized that external capital raising, such as an IPO, is not the only solution. SK Hynix plans to compare the pros and cons of self-funding versus external investment and choose the option most favorable to existing shareholders.

In a document titled “Explanation Regarding Recent Reports on Solida,” SK Hynix noted, “The decision to use external or internal capital will be made after comprehensively considering not only the form but also the economic value impact on existing shareholders.” The company issued the statement to address concerns over potential double listing controversies sparked by reports about Solida’s possible U.S. stock market listing.

Solida, a U.S. subsidiary established during SK Hynix’s 2021 acquisition of Intel’s NAND and SSD business for 9 billion dollars, has reportedly been considering a U.S. IPO as early as next year, with Reuters citing a potential corporate value of up to 150 billion dollars (approximately 210 trillion Korean won).

Weighing Pros and Cons of Self-Funding vs. External Investment

SK Hynix acknowledged the need for additional investment to enhance Solida’s production capacity and technological competitiveness. However, it clarified that funding does not necessarily require an IPO. The company stated, “Given our current financial capacity, we can explore various capital utilization methods, including self-funding.”

Nonetheless, SK Hynix added, “Self-funding is not always the optimal choice.” With simultaneous investments required in multiple sectors—such as HBM (high-bandwidth memory), server DRAM, and enterprise SSDs (eSSD)—the company emphasized the importance of strategic capital allocation.

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Some good news to ease the recent fears and concerns regarding their subsidiary listing which will harm SK - Full article

• Companies will collaborate to develop advanced memory structures, chip stacking technologies and materials engineering innovations to increase AI memory performance
• KIOXIA joins Applied Materials’ growing EPIC Center ecosystem, which includes chipmakers, chip designers, equipment partners and universities

SANTA CLARA, Calif.,Sept. 29, 2026(GLOBE NEWSWIRE) --Applied Materials, Inc., the leader in materials engineering solutions for the semiconductor industry, today announced thatKIOXIA Corporation, a leading global supplier of flash memory and solid state drives (SSDs), will join Applied’s EPIC Center inSilicon Valleyas an innovation partner to advance next-generation memory technologies. The companies will work together at the EPIC Center on advanced memory-cell and structure creation, multi-chip stacking architectures, and new materials engineering approaches designed to increase memory density and performance for the AI era.

“AI infrastructure requires memory solutions that can deliver dramatically higher density, greater bandwidth and improved energy efficiency,” saidGary Dickerson, President and CEO of Applied Materials. “By bringing KIOXIA’s deep expertise in memory technology together with Applied’s materials engineering innovations at the EPIC Center, we’re creating a powerful partnership to define what’s possible in next-generation memory.”

“At KIOXIA, we have always believed that the possibility of memory is defined by the ability to stretch the boundaries of materials and process innovation,” saidHiroo Ota, President and CEO ofKIOXIA Corporation. “Our collaboration with Applied Materials reflects our shared commitment to driving memory innovation, and we are excited to partner at the EPIC Center to achieve advanced breakthroughs.”

Through the EPIC Center partnership, Applied Materials and KIOXIA will collaborate on R&D initiatives focused on the most critical challenges in next-generation memory innovation. Areas of focus include:

• Advanced memory cell and structure creation to develop more capable, higher-density memory architectures for AI applications
• Multi-chip stacking for next-generation memory to enable chip integration that increases memory density and performance within constrained form factors
• Advanced packaging for stacked memory to improve integration and interconnect performance in complex multi-die memory solutions
• Materials engineering innovations that enable next-generation memory structures while supporting manufacturability at scale

“Memory is at the center of the AI innovation roadmap, and the challenges of increasing memory density while managing cost and complexity require breakthroughs across materials, equipment and process technology,” said Dr.Prabu Raja, President of theSemiconductor Products Groupat Applied Materials. “We look forward to partnering with KIOXIA at the EPIC Center, where our teams will drive advances in AI memory through deep co-innovation.”

“Partnering with Applied Materials at the EPIC Center gives us a unique environment to tackle the hardest challenges in next-generation memory,” saidMinori Kajimoto, General Manager ofAdvanced Memory Developmentat KIOXIA. “By having top innovators from KIOXIA and Applied Materials working side by side, we aim to accelerate the commercialization of breakthroughs in memory and packaging technologies that achieve new levels of integration and performance for AI computing.”

Applied’s new,$5 billion* EPIC (Equipment and Process Innovation and Commercialization) Center inSilicon Valleyrepresents the largest-everU.S. investment in advanced semiconductor equipment R&D. The center, which will be operationally ready this year, is designed from the ground up to dramatically reduce the time it takes to commercialize breakthrough technologies from early-stage research to full-scale manufacturing. For chipmakers, the EPIC Center will provide earlier access to Applied’s R&D portfolio, faster cycles of learning and accelerated transfer of next-generation technologies into high-volume manufacturing, within a secure collaborative environment. In addition, the co-innovation programs at the EPIC Center will provide Applied with greater multi-node visibility to guide R&D investments while increasing R&D productivity and value sharing.

*Capital spending is expected to scale over time to approximately $5 billion as customer projects commence.

Original source

TrendForce’s latest research reveals that continued expansion in AI server demand is keeping HBM and conventional DRAM in competition for limited advanced-process and wafer capacity. Meanwhile, yields and output for next-generation products will take time to ramp, keeping memory supply tight through 2027.

Against a backdrop of continued memory price increases, suppliers have also taken a firmer stance on raising HBM prices in 2027. TrendForce has raised its 2027 HBM price outlook to reflect persistent supply constraints, a growing share of higher-priced HBM4, and the gradual ramp-up of HBM4e in 2H27. Blended ASP is now projected to jump 121% YoY.

Supply and cost constraints drive capacity adjustments, with 8-Hi emerging as a priority option

TrendForce reports that GPU and ASIC manufacturers are now considering reducing HBM capacity per device. This shift is driven not by waning end-market demand but by limited HBM supply and quickly increasing system costs. 

Compared to earlier plans for 12-Hi HBM modules, 8-Hi configurations use fewer DRAM dies, lowering both the cost per stack and the overall GPU bill of materials. These configurations also enable the same HBM bit output to support more GPUs. Given the ongoing tight HBM supply, 8-Hi setups are expected to be a priority for evaluation by many GPU and ASIC vendors in 2027, balancing performance, supply, and cost.

However, reducing HBM capacity does not necessarily translate into a lower price per gigabit. Each HBM stack requires one base die, and this cost does not decline proportionally with the number of DRAM layers. An 8-Hi stack has less DRAM capacity over which to spread the base-die cost than a 12-Hi stack, making its per-Gb cost actually higher. TrendForce expects 8-Hi products to carry a roughly 10–20% price premium per Gb over 12-Hi products in 2027.

Overall, TrendForce expects the HBM market to remain supply-constrained in 2027. With both availability and rising costs shaping purchasing decisions, 8-Hi penetration is expected to increase as more GPU and ASIC vendors evaluate the configuration. However, its higher per-Gb cost relative to 12-Hi will remain an important consideration in specification negotiations and supply-chain planning. As a result, while adjustments to HBM capacity may help alleviate some GPU cost pressure in 2027, they are unlikely to reverse the broader trend of substantial HBM price increases.

Original source (no paywall)

A Samsung Electronics executive said on ​Tuesday that high-bandwidth memory (HBM) ‌is expected to account for nearly 30% of Dynamic ​Random-Access Memory (DRAM) chipmakers' total ​wafer capacity next year, ⁠up from about 20% ​currently.

Samsung Electronics Executive Vice ​President Kim Taewoo said HBM and standard DRAM compete for the ​same wafer capacity, ​meaning expanding HBM output could constrain ‌standard ⁠DRAM supply.

HBM is a crucial component for AI computing, consisting of vertically ​stacked memory ​chips ⁠that allow processors to access vast ​amounts of data at ​high ⁠speeds. The market is dominated by South Korea's ⁠SK ​Hynix and ​Samsung Electronics, as well as US-based ​Micron Technology.

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Aside from the increased competition, more signs that the ongoing HBM demand, importance and shortage for the AI race/buildout isn't slowing down next year as expected: Source

SK hynix was named partner of the year for the second straight year after being recognized for collaboration results in validating HBM5, the eighth-generation high bandwidth memory (HBM), with TSMC, the world's largest foundry (semiconductor contract manufacturing) company. It also unveiled next-generation AI memory products, including HBM4 and SOCAMM2, which will be installed in Nvidia's next-generation artificial intelligence (AI) platform Vera Rubin.

HBM5 is three generations ahead of HBM3E, the fifth-generation HBM widely used in AI servers today. SK hynix began shipping HBM4, the sixth-generation HBM, in the second quarter this year, and has supplied samples of HBM4E, the seventh generation, to major customers. HBM5 is the next-generation product and is currently in the validation stage to verify performance in combination with TSMC's advanced packaging technology.

SK hynix said on the 28th that it participated in the TSMC Open Innovation Platform (OIP) Conference held in Santa Clara, Calif., on the 23rd (local time) and unveiled next-generation memory products and development strategies. OIP is an open innovation platform that TSMC operates to develop technologies and collaborate with semiconductor ecosystem corporations. SK hynix has been taking part in this event since 2024.

At this event, SK hynix was selected as partner of the year in TSMC's 3DFabric-HBM Integration category. It is the second consecutive year. This year, it was recognized for collaborative results in validating HBM5 based on CoWoS (chip on wafer on substrate), TSMC's advanced packaging technology.

CoWoS is TSMC's 2.5-dimensional (2.5D) advanced packaging technology that integrates multiple semiconductors such as HBM and the graphics processing unit (GPU) on a single substrate. As the number of HBM stacks and data processing speeds increase, the packaging technology that links them to AI accelerators becomes more important. SK hynix and TSMC have been conducting related validation since the early stages of HBM5 development.

Full article (no paywall)

• NVIDIA’s Board of Directors has authorized a $150 billion increase to the share repurchase program, raising the remaining total program to $235 billion.
• This marks the largest share repurchase authorization increase in history.

SANTA CLARA, Calif., Sept. 28, 2026 NVIDIA today announced that its Board of Directors has authorized an additional $150 billion under the company’s existing share repurchase program, increasing the total remaining amount authorized to $235 billion.

The company expects to execute the total remaining program through fiscal year 2028.

“NVIDIA’s growth is being driven by a once-in-a-generation platform shift to AI and accelerated computing,” said Jensen Huang, founder and CEO of NVIDIA. “Our cash generation gives us the capacity to invest in the technologies that advance this transformation and return capital to shareholders. This authorization reflects our confidence in the long-term opportunity ahead.”

NVIDIA's official PR

It will take years for AI investments by major tech companies to pay off. But before that happens, companies have to break even — and that will also take years.

Goldman Sachs strategist Ryan Hammond crunched some numbers and thinks hyperscalers like Amazon, Oracle, and Microsoft need to generate about $300 billion in AI revenue in the "next few years" to break even on their investments.

The hyperscalers have a ways to go before reaching that number, according to Hammond.

Hyperscaler cloud revenues have accelerated sharply this year, annualizing at about $70 billion above the pre-AI trend in the second quarter of 2026. Announced backlogs for the group exceed $1.5 trillion.

"We estimate that AI users would need to spend roughly $1 trillion annually on AI applications in order for the hyperscalers to generate solid returns on investment and the application layer to generate strong profit margins on their compute expenses," Hammond wrote.

The stakes are high for investors, who have plowed back into hyperscaler stocks in recent weeks amid AI optimism.

• Original source (Yahoo finance)
• Source 2 (streetinsider)
• Source 3 (Bloomberg - paywall)

Chipmaker SK Hynix's subsidiary Solidigm is considering building a NAND flash memory chip factory in the ​US, with upstate New York emerging as a leading candidate, three people familiar with the matter said.

The South Korean chipmaker faces growing pressure from the ‌Trump administration to expand US manufacturing, with Washington pushing to reshore semiconductor production as huge investments in AI data centres dry up global supplies of memory chips.

The proposed project would be separate from SK Hynix's discussions with Intel to make memory chips at the US chipmaker's Ohio facility, the sources said, speaking on condition of anonymity as the matter is confidential.

SK Hynix said its "subsidiary Solidigm is reviewing various options to strengthen its business ​competitiveness, but no specific plans have been confirmed at this time."

US-based Solidigm said it does not comment on market rumors or speculation. "Solidigm regularly evaluates strategic alternatives to ​enhance its long-term competitiveness," the company added, echoing SK Hynix's comment. "No decision regarding any specific course of action has been made."

A US plant ⁠would reduce Solidigm's reliance on its sole NAND production facility in the Chinese city of Dalian, while helping to shield it from potential US tariffs and curbs on exports of chipmaking ​equipment to China.

The expansion plan comes as Chinese rivals rapidly boost capacity to narrow the technology gap with foreign competitors.

Chinese chipmaker CXMT plans to set up an R&D production line for ​NAND flash memory at a new plant in Beijing, as it seeks to enter the booming market dominated by Samsung, SK Hynix and Micron, Reuters reported on Friday.

However, no agreement has been reached regarding Solidigm's US investment and key project details remain under discussion, one of the sources cautioned.

SK Hynix may move cautiously as making chips in the US is more expensive than in South Korea, while Washington and Seoul continue talks over ​trade and investment matters.

Shares of SK Hynix ended up 6.4% versus a gain of 2.7% in the benchmark KOSPI index.

Asked about US pressure on Korean chipmakers to ​build factories in America, President Lee Jae Myung said Seoul would seek to "protect South Korea's national interests while respecting the views of companies."

"It remains a matter of controversy," he said on Friday, without elaborating.

One of ‌the sources ⁠said SK Hynix may face less political resistance to producing NAND chips through its US subsidiary because the technology is viewed as less strategically sensitive than advanced DRAM products, such as high-bandwidth memory (HBM) chips.

The government has urged SK Hynix and rival Samsung to speed plans for a new semiconductor-making cluster in South Korea's southwest, drawing potential investments in the hundreds of billions of dollars.

Potential opposition from Seoul could complicate SK Hynix's ambitions to make advanced memory chips such as HBM or even conventional DRAM chips, at Intel's facilities, Reuters reported this week.

US Commerce Secretary ​Howard Lutnick has threatened tariffs of up to ​100% on South Korean and Taiwanese ⁠companies unless they commit to expanding production in the US.

South Korean chipmakers are being pulled in opposing directions by Washington and Seoul, which are also negotiating adoption of a $350-billion investment commitment South Korea made to the US last year in exchange for lower US tariffs.

Original source (Reuters)

Anthropic PBC, OpenAI OPCO LLC, SpaceXAI, and Google LLC made an illegal deal to collectively slow the pace of AI development, according to a new lawsuit, depriving paying subscribers of product improvements they were promised.

The four artificial intelligence giants coordinated on Saturday, according to the complaint, to slow AI development when their executives publicly agreed with an essay that advocated “limits on the rate of unchecked AI progress,” as concerns about the implications of AI development grow.

But the lawsuit alleges that such an agreement among competitors violates antitrust rules, specifically Section 1 of the Sherman Antitrust Act that forbids coordination to restrain competition. The plaintiffs, who are consumers who subscribe to the defendants’ AI services, are seeking class certification, an injunction against the companies, and declaratory judgment that they violated federal antitrust law.

“Plaintiffs challenge only what the antitrust laws forbid: an agreement among competitors about how fast their competing products will improve,” the plaintiff said. “Congress has granted no exemption for that agreement.”

None of the defendants immediately responded to a request for comment.

The plaintiffs allege the conspiracy started when Anthropic Chief Executive Dario Amodei published an essay titled “We Must Pace the Frontier,” calling for “industry-wide coordination.” They said SpaceXAI founderElon Muskthen endorsed the proposal, OpenAI CEO Sam Altman followed, while Google DeepMind co-founder Demis Hassabis called the essay “the right path forward,” the complaint says.

The plaintiffs argue the coordination amounts to a classic output-restricting cartel, the complaint says. The plaintiffs allege they’re effectively overcharged and are paying the same prices for products that improve more slowly than competition would otherwise produce.

“A company that slows alone while rivals race ahead loses customers, revenue, talent, and technological leadership,” the plaintiffs say.

Trial Lawyers for Justice represents the plaintiffs.

The case is Buist v. Anthropic PBC, N.D. Cal., No. 3:26-cv-10693, complaint 9/18/26.

I see this as good news as US AI development and progress shouldn't be slowed down since we're in a race against other hostile countries to continue leading and innovating. Original source

>MOUNTAIN VIEW & SEATTLE (Friday, 18 September) — The Gates Foundation and Google today unveiled an expanded initiative to bring advanced AI tools to 200 million smallholder farmers across Sub-Saharan Africa and South Asia, helping them anticipate climate risks, improve farm productivity, and build resilience in a changing climate.

>The multi-year roadmap will scale AI applications from an initial reach of 50 million farmers to 200 million smallholders across critical climate-adaptation and food-security challenges. To support this expansion, the Gates Foundation and Google have contributed $100 million in combined funding and dedicated research and engineering support to organizations delivering scaled impact.

>“No matter where they farm, people deserve access to the weather, crop, and soil information that can mean the difference between a good harvest and a failed one. When that information reaches farmers at scale, it’s transformational for their families, their communities, and their economies. We’re proud to work with Google, agricultural partners, and governments across Africa and South Asia to put AI to work solving a problem that climate change is making more urgent,” said Mark Suzman, CEO of the Gates Foundation.

>“Our collaboration with the Gates Foundation is about turning the extraordinary potential of computational science into solutions that can make a real difference in people’s lives,” said Maggie Johnson, Global Head and Vice President of Google.org. "That means going beyond building AI for the Global South to building it alongside the people and communities it is designed to serve. Together, we’re connecting frontier AI with the farmers who feed a third of the world.”

>Smallholder farmers produce nearly 35% of the world’s food across more than 500 million farms, most of them smaller than two hectares. Yet they remain highly exposed to increasingly unpredictable weather and often lack access to the satellite data, financial services, and public support that can help them prepare and respond. 

I take it more memory/physical hardware will be needed and invested to support these new, constantly expanding AI tools - Bill & Melinda Gates Foundation

NEW DELHI: The US-based Micron Technology said on Thursday that its DRAM and NAND products have started shipping from its Sanand plant in Gujarat to customers globally, adding that the company employs more than 7,000 individuals directly in the country.

“Earlier this year, we began commercial production at Sanand. It is the first semiconductor assembly and test facility here in India and the first project under the India Semiconductor Mission (ISM),” Sanjay Mehrotra, chairman & CEO of Micron Technology, said at the inauguration of the Semicon India 2026 event being organised here from September 17 to September 19.

“Finished DRAM and NAND products are now leaving Gujarat for customers around the world. Carrying a label this country has waited a long time to put on a memory chip made in India,” the chief executive added.

The American multinational semiconductor maker is investing ₹22,516 crore in its Sanand plant, which will serve domestic and global demand. Its production capacity is around 14 million units per week.

Micron, whose semiconductors are used across industries, including AI data centers, said its current production exceeds the memory required for India's entire market.
“This year, we will assemble and test tens of millions of chips at Sanand. Next year, hundreds of millions of chips.”

Mehrotra said that Micron employs more than 7,000 individuals in India directly, and its operations support “tens of thousands more jobs across the value chain”. “Our India teams have contributed to more than 3,700 patents, inventions and disclosures,” he added.

Building on India’s semiconductor foundation, Micron Research Labs recently announced that, led from the US, it will now extend its global research network here in India, bringing together Micron, government, academia, customers, startups and research organisations to drive breakthroughs that make AI more powerful, scalable and sustainable, the top executive said.

He underscored that Micron’s centers in Hyderabad and Bangalore are now a core part of Micron's global technology network.
“An ecosystem is only as strong as the people in it. Through the University Research Alliance at Micron, we work with 20 universities across the country on sponsored research and credit-bearing design courses so that students arrive in industry having already done the work,” Mehrotra said, adding that the India Semiconductor Mission and Semicon 2.0 gave this industry a foundation it did not have before.

Original source

SK hynix is formally telling their regulators, lawmakers and investors that recent rumors of a new chip factory in Japan are unconfirmed, though expansion options remain under evaluation so there should be a final outcome within 3 months regarding if it goes ahead or not.

Original source - US SECURITIES AND EXCHANGE COMMISSION

As tight supply and soaring costs put HBM under growing pressure, the AI boom is opening the door to alternative memory technologies, with CXL (Compute Express Link) emerging as a key contender. Yet rather than replacing HBM, CXL may be better positioned to complement it, according to Chosun Biz and Financial News, citing remarks from OpenAI and Intel executives at the AI Infrastructure Summit in California.

As Chosun Biz explains, CXL is a next-generation interconnect that expands memory capacity by linking additional memory resources to computing systems and enabling memory to be pooled and shared across servers. AI accelerators can then tap into CXL-connected memory through the CPU, offering a more flexible way to scale capacity. Some industry observers, per the report, believe wider adoption could reduce the amount of costly HBM required without significantly compromising system performance, potentially bringing down the cost of large-scale AI server deployments.

CXL’s Two Key Limits: Use Cases and Bandwidth

Yet two major hurdles could limit how far CXL can encroach on HBM’s territory. Daniel Morris, an OpenAI researcher working on AI accelerator design, and Vidhya Thyagarajan, Intel’s head of AI System-on-Chip (SoC) architecture, pointed to a lack of practical use cases for AI model execution and a sizable bandwidth gap with HBM.

Chosun Biz, citing Morris, notes that he has yet to identify a compelling use case for CXL in actual AI model workloads. According to Morris, CXL’s role may be largely limited to storing inactive data that is rarely accessed by large AI models.

Meanwhile, Thyagarajan, points out that the technology is better positioned as a complement to secondary storage than as a substitute for HBM, as the data transfer speed between GPUs via CXL is “by no means as fast as HBM.”

Against this backdrop, Chosun Biz notes that the scenario could leave the competitive landscape largely intact for Samsung Electronics and SK hynix, which currently hold leading positions in the HBM market, even as CXL gains traction as an additional tier in the broader AI memory hierarchy.

SK hynix, Samsung Push Ahead With CXL Memory

Despite questions over CXL’s ability to challenge HBM, SK hynix and Samsung are pressing ahead with the technology as a new layer in the AI memory hierarchy. In June, SK hynix unveiled its new “Inference Tier Memory Expansion” (ITME) architecture, which inserts “CXL hybrid memory” between DDR and SSD in today’s HBM-based AI memory stack, according to SeDaily.

SeDaily, citing SK hynix, notes that by expanding the conventional HBM → DDR → SSD memory hierarchy into HBM → DDR → CXL memory → SSD, the memory giant was able to improve AI inference efficiency by 35.7%. Under the new architecture, CXL memory serves as a memory hub, predicting hot data that will be needed by HBM and DDR, retrieving that data from SSDs in advance and feeding it into the faster memory tiers, the report explains.

Against this backdrop, Samsung Electronics and SK hynix are racing to advance not only CXL-based architectures but also the memory products needed to support them. According to SeDaily, Samsung plans to begin mass production of its CXL Memory Module (CMM-D) 3.0, based on the latest CXL 3.2 specification, by the end of this year.

On the other hand, Sharing Economy News reports that SK hynix has debuted samples of its second-generation CMM-DDR5 based on CXL 3.2 and has since begun supply talks with potential customers, though it has yet to disclose a firm timeline for mass production.

Original source

As demand grows for high-value memory used in servers and AI, SK hynix is accelerating its shift to more advanced DRAM. According to Chosun Biz, SK hynix is rapidly expanding production of its sixth-generation 10nm-class (1c) DRAM, which is set to become the core memory die for its next-generation HBM4E. The transition comes as SK hynix prepares HBM4E for mass production in 2027. According to Yonhap News, the company said in July that it had already provided HBM4E samples to customers as development moves forward.

Sources cited by Chosun Biz say 1c DRAM accounted for around 10% of SK hynix’s production in 1Q26 and 13% in 2Q26, compared with roughly 16% at Samsung and 19% at Micron. SK hynix’s share is projected to climb to around 24% in 3Q26 and 34% in 4Q26, surpassing Samsung’s roughly 31%, before reaching 35% in 1Q27. At that point, 1c is expected to overtake 1b, at around 33%, for the first time and become SK hynix’s main DRAM process.

SK hynix also said during its 2Q26 earnings call that shipments of 1c DRAM began ramping up during the quarter. Looking to the second half, the company expects stronger bit growth as HBM4 volumes increase. Shipments of 1c-based general-purpose DRAM are also expected to expand, Chosun Biz adds.

Samsung and SK hynix, meanwhile, are taking different approaches to HBM4. As Chosun Biz notes, Samsung adopted 1c DRAM for HBM4, targeting speeds of around 11.7Gbps, while SK hynix has prioritized mass-production stability with proven 1b DRAM and MR-MUF packaging. SK hynix is maintaining its HBM4 volume lead with this approach, while Samsung is seeking to gain share through stronger performance, the report adds.

1c Shift Could Boost Productivity and Cost Efficiency

SK hynix’s accelerated shift to 1c is expected to bring benefits beyond process scaling, particularly in cost and productivity. By increasing the number of bits produced per wafer, the newer process could improve cost competitiveness and help support DRAM profitability from the second half onward. Still, an industry official cited by Chosun Biz cautioned that the transition will only be meaningful if mass-production yields improve and customer qualification schedules keep pace.

Competition Extends to 1d DRAM

Looking further ahead, competition is already extending to seventh-generation 10nm-class (1d) DRAM. According to The Bell, Samsung reportedly aims to complete 1d development in September and begin preparations for mass production in December. SK hynix, meanwhile, is said to be targeting development completion in December and mass-production preparations in June 2027, putting it six months behind Samsung. The report adds that Samsung could begin initial mass production around the end of 2027, while SK hynix’s later schedule could push its production start further out. Samsung plans to use 1d DRAM in HBM5E, which is expected to launch around 2030, while SK hynix has yet to disclose its 1d application plans.

Source (Trendforce)

• September 9: Goldman Sachs Communacopia + Technology Conference 2026
• September 10: ORCL's earnings call
• September 11: US' September CPI report
• September 15-16: US' FOMC meeting + interest rate decision
• September 15-17: AI Infra Summit 2026 (speakers from Micron, SK, Samsung, Marvell, Intel, NVIDIA, AMD, Oracle, Amazon, Microsoft, Google, Rambus)
• September 16-17: ALL IN 2026 (speakers from NVIDIA, AMD, OpenAI, AWS, IBM, Qualcomm, Lenovo)
• September 21: SNDK joins S&P 100 Index
• September 21: DELL joins S&P 100 Index
• September 22: GSA U.S. Executive Forum 2026 (Includes dedicated executive sessions on memory supply constraints and AI infrastructure economics ("The Memory Equation — When Supply Can't Keep Up with Ambition")
• September 22: 2026 US Treasury Market Conference
• September 22: HPE AI Roadshow with NVIDIA
• September 22-23: NVIDIA's AI Day Singapore
• September 22-23: AI Summit Barcelona 2026 (speakers from NVIDIA, Microsoft, HPE, Google, Amazon, ARM, Oracle)
• September 22-24: Embedded World North America 2026 (NVIDIA speaking)
• September 23: TSMC North America OIP Ecosystem Forum
• September 23-24: President Xi visiting Trump in Washington, US
• September 29-30: Microelectronics UK 2026
• September 30: MU's Q4 2026 earnings call
• September 29 - October 1: The AI Conference 2026

China is about a decade and a half behind in developing cutting-edge chipmaking tools, according to a top executive at Germany’s Zeiss Group, a key supplier in the global semiconductor industry. 

It is a “reasonable assumption” that Beijing will need 15 years to develop extreme ultraviolet, or EUV, lithography machines, Frank Rohmund, who leads the semiconductor division at Zeiss, said on Bloomberg TV, while noting that the country’s progress is hard to quantify.

Chipmaking technology is a key target of US efforts to prevent China from acquiring top-flight artificial intelligence chips as the two biggest economies compete to develop cutting-edge models.

The US bars Zeiss shareholder ASML from shipping its most advanced machines to the country, while Beijing is pouring money into its domestic semiconductor sector in a bid for self-sufficiency. 

Zeiss is the exclusive supplier of optics used in ASML’s EUV machines, and the Dutch company is the world’s only manufacturer of such equipment.

EUV technology is essential for producing the most advanced chips used in Nvidia’s AI accelerators. 

Rohmund’s estimate comes after UBS analysts led by Francois-Xavier Bouvignies wrote this week that China is likely at least a decade away from developing domestic EUV technology. 

China is one of ASML’s top markets for the previous generation of chipmaking machines that use deep ultraviolet, or DUV, technology. The US also requires export licenses for several of the Dutch company’s more sophisticated immersion DUV models.

Any plan to expand export controls to include legacy DUV machines would be bad for business, according to Rohmund.

Original source

Source 2 (Bloomberg - paywall alert)

As China accelerates its push to develop advanced chipmaking equipment, it still appears to be years behind ASML in lithography technology. Bloomberg and BigGo Finance, citing UBS, report that China could achieve high-volume production of immersion deep ultraviolet (DUV) systems within two to five years, but is unlikely to develop EUV tools within the next decade.

UBS, according to Bloomberg, sees signs of progress, however, pointing to a surge in Chinese patent activity—particularly in light sources and laser subsystems—as a key indicator of technological maturity. The analysts said China’s capabilities appear comparable to where ASML stood around 2004, roughly 15 years before the Dutch company began mass-producing EUV systems.

For context, Bloomberg notes that ASML’s immersion DUV machines cost nearly US$90 million (RM363 million) each, compared with more than US$200 million for its most advanced EUV systems.

Even with the technology gap still wide, export restrictions are already taking a toll on ASML’s China business. EUV systems remain barred from being shipped to China, while Beijing’s push for semiconductor self-sufficiency is further weighing on demand. China accounted for 14% of ASML’s net system sales by shipment location in Q2 2026, down from 19% in Q1, according to the company’s latest results.

China’s DUV, EUV Progress in Focus

UBS’s assessment, as noted by BigGo Finance, comes as Beijing pursues a secretive, state-backed effort to build a homegrown EUV lithography system. The project has been likened to China’s “Manhattan Project,” reflecting the vast resources behind an initiative considered strategically vital to the country’s semiconductor ambitions, the report adds.

The scale of that effort became clearer in a late-2025 Reuters investigation, which revealed that China had already moved beyond the research stage to a EUV prototype. Completed in early 2025, the machine was undergoing testing and reportedly occupies nearly an entire factory floor. Citing people familiar with the project, Reuters said the system is operational and can generate EUV light, but has yet to produce a working chip.

On the other hand, a separate Reuters report noted in July that China has begun mass-producing domestically developed immersion deep-ultraviolet (DUV) lithography machines. Leading the production effort is Shanghai Aishengna Electronic Technology Group, a little-known Chinese state-owned company that has brought in teams from several leading domestic lithography startups, the report suggested.

According to The Information, China has a concrete roadmap for its DUV machines, as it plans to build about five this year and roughly 20 in 2027.

Original article (Trendforce)

NAND Flash suppliers are broadening their enterprise SSD product lines to boost profits and refine their offerings, according to TrendForce’s recent memory industry report. Increased shipment volumes and higher contract prices are expected to propel the combined revenue of the top five enterprise SSD brands to double quarter-over-quarter, reaching $37.59 billion in 2Q26—a staggering 103.6% increase.

TrendForce expects enterprise SSD demand to remain elevated in 3Q26 thanks to the growing adoption of generative AI agent services, steady data center infrastructure deployments by CSPs, and large-scale shipments of NVIDIA GB-series AI server racks. These factors are expected to drive industry revenue even higher. However, rising output from Chinese suppliers and the emergence of China’s domestic cloud market could reshape the competitive landscape going forward.

Among the top five enterprise SSD brands, market leader Samsung saw a significant ramp-up in shipments of its 176-layer QLC products in 2Q26. Meanwhile, the share of high-end PCIe 5.0 products in its shipment mix also increased substantially. These gains pushed quarterly revenue to approximately $14.35 billion. As major North American CSPs accelerate the transition of their data center architectures from PCIe 4.0 to PCIe 5.0, Samsung’s ability to provide both DRAM and NAND Flash has made it a preferred supplier of memory and enterprise SSDs for many server customers.

SK hynix Group ranked second with revenue exceeding $8.63 billion in 2Q26. SK hynix continued to expand shipments of its 321-layer TLC products, while its subsidiary Solidigm leveraged its technological strengths in QLC to sustain strong growth in shipments of ultra-high-capacity QLC enterprise SSDs.

Original source (Trendforce)